IRF5851 TSOP6
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The IRF5851 is an N-channel MOSFET designed for high-efficiency power management applications. This MOSFET features low on-resistance and fast switching capabilities, making it ideal for a wide range of power conversion and management applications. It is packaged in a compact TSOP6 package, which is suitable for space-constrained designs.
Key Features:
- N-channel MOSFET
- Low on-resistance (Rds(on)): 60mΩ @ 4.5V
- Fast switching speed
- Low gate charge
- High efficiency
- Compact TSOP6 package
- Drain-to-Source Voltage (Vds): 30V
- Gate-to-Source Voltage (Vgs): ±12V
- Continuous Drain Current (Id): 5.3A
- Pulsed Drain Current (Id, pulse): 42A
- Total Gate Charge (Qg): 8.3nC @ 4.5V
- Power Dissipation (Pd): 1.25W
- Operating Temperature Range: -55°C to +150°C
- Package: TSOP6
- DC-DC converters
- Power management in portable devices
- Load switches
- Motor control
- Battery management
- Switching regulators
Technical Specifications:
- Logic Family: CMOS
- Number of Channels: 3
- Switch Configuration: Single-Pole Double-Throw (SPDT)
- Supply Voltage Range: 3V to 15V
- “ON” Resistance (R_ON): 125Ω typical at V_DD = 10V
- “OFF” Leakage Current (I_OFF): ±100pA typical at V_DD = 10V
- Control Input Voltage (V_IH): 0.7 V_DD min, 0.3 V_DD max
- Maximum Operating Frequency: 40 MHz at V_DD = 10V
Applications:
- Signal routing and switching
- Analog and digital multiplexing
- Audio and video signal processing
- Data acquisition systems
- Test equipment