The STP80NF70 is an N-channel power MOSFET designed for high-speed switching applications. It offers low on-state resistance (RDS(on)) and low gate charge, making it suitable for use in power supplies, motor control, and other high-current switching circuits.
Key Features:
- Low On-Resistance (RDS(on)): 0.0092 ohms (max) at VGS = 10V, ID = 40A
- Low Gate Charge (Qg): 106 nC (typical)
- Avalanche Energy Rating: 360 mJ
- Low Input Capacitance (Ciss)
- Fast Switching Speed
- Drain-Source Voltage (VDS): 68V
- Continuous Drain Current (ID): 80A
- Pulsed Drain Current (IDM): 320A
- Gate-Source Voltage (VGS(th)): 2V (max)
- Total Power Dissipation (PD): 300W
- Operating Temperature Range: -55°C to 175°C
- Switching Power Supplies
- Motor Control
- DC-DC Converters
- Class D Amplifiers
Technical Specifications:
- Logic Family: CMOS
- Number of Channels: 3
- Switch Configuration: Single-Pole Double-Throw (SPDT)
- Supply Voltage Range: 3V to 15V
- “ON” Resistance (R_ON): 125Ω typical at V_DD = 10V
- “OFF” Leakage Current (I_OFF): ±100pA typical at V_DD = 10V
- Control Input Voltage (V_IH): 0.7 V_DD min, 0.3 V_DD max
- Maximum Operating Frequency: 40 MHz at V_DD = 10V
Applications:
- Signal routing and switching
- Analog and digital multiplexing
- Audio and video signal processing
- Data acquisition systems
- Test equipment