11N60 color TV FET
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Description: The 11N60 is an N-channel power MOSFET designed for high-voltage switching applications in electronic circuits. It features a high voltage rating and moderate current handling capability, suitable for use in power supplies, inverters, motor controls, and other applications requiring efficient switching and low on-resistance.
Key Features:
- N-channel power MOSFET
- High voltage rating: 600V
- Continuous Drain Current (I_D): 11A
- Low on-resistance for high efficiency
- Fast switching speed
- TO-220 package for effective heat dissipation
- Drain-Source Voltage (V_DSS): 600V
- Gate-Source Voltage (V_GSS): ±30V
- Continuous Drain Current (I_D): 11A
- Power Dissipation (P_D): 40W
- On-Resistance (R_DS(on)): 1.2Ω (max) at V_GS = 10V, I_D = 5.5A
- Operating Temperature Range: -55°C to +150°C
- Package Type: TO-220
- Power supplies
- Inverters
- Motor drives
- Switching regulators
- Industrial and automotive applications
Technical Specifications:
- Logic Family: CMOS
- Number of Channels: 3
- Switch Configuration: Single-Pole Double-Throw (SPDT)
- Supply Voltage Range: 3V to 15V
- “ON” Resistance (R_ON): 125Ω typical at V_DD = 10V
- “OFF” Leakage Current (I_OFF): ±100pA typical at V_DD = 10V
- Control Input Voltage (V_IH): 0.7 V_DD min, 0.3 V_DD max
- Maximum Operating Frequency: 40 MHz at V_DD = 10V
Applications:
- Signal routing and switching
- Analog and digital multiplexing
- Audio and video signal processing
- Data acquisition systems
- Test equipment