STP65NF06
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The STP65NF06 is an N-channel MOSFET designed for high efficiency and fast switching applications. It is well-suited for a wide range of applications due to its low gate charge, low on-resistance, and high current handling capabilities.
Key Features:
- N-channel enhancement mode MOSFET
- Low gate charge (Qg)
- Low on-resistance (Rds(on)): 0.014 ohms (max) at Vgs = 10V
- High current capability: 60A (continuous)
- High avalanche ruggedness
- Fast switching
- Drain-Source Voltage (Vds): 60V
- Continuous Drain Current (Id): 60A
- Pulsed Drain Current (Id, pulse): 240A
- Gate-Source Voltage (Vgs): ±20V
- Total Gate Charge (Qg): 70nC (typical)
- Gate Threshold Voltage (Vgs(th)): 2-4V
- Power Dissipation (Pd): 110W
- Operating Temperature Range: -55°C to 175°C
- DC-DC converters
- Motor control
- Power management in portable and battery-operated devices
- Switch-mode power supplies (SMPS)
- Load switch applications
Technical Specifications:
- Logic Family: CMOS
- Number of Channels: 3
- Switch Configuration: Single-Pole Double-Throw (SPDT)
- Supply Voltage Range: 3V to 15V
- “ON” Resistance (R_ON): 125Ω typical at V_DD = 10V
- “OFF” Leakage Current (I_OFF): ±100pA typical at V_DD = 10V
- Control Input Voltage (V_IH): 0.7 V_DD min, 0.3 V_DD max
- Maximum Operating Frequency: 40 MHz at V_DD = 10V
Applications:
- Signal routing and switching
- Analog and digital multiplexing
- Audio and video signal processing
- Data acquisition systems
- Test equipment