FQPF7N65C 7N65 MOSFET
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Description: The FQPF7N65C is an N-channel MOSFET designed for high-speed switching applications. It features low on-resistance and can handle high currents, making it suitable for power management in various electronic circuits. The MOSFET operates efficiently with low gate drive voltage, making it ideal for applications requiring fast switching speeds and high efficiency.
Key Features:
- N-channel enhancement-mode power MOSFET
- Low on-resistance for high efficiency
- Fast switching speed
- Low gate drive voltage
- High current handling capability
- Avalanche energy specified
- RoHS compliant
- Drain-Source Voltage (V_DS): 650V
- Continuous Drain Current (I_D): 7A
- Pulsed Drain Current (I_DM): 28A
- Gate-Source Voltage (V_GS): ±30V
- On-Resistance (R_DS(on)): 1.6Ω (max) at V_GS = 10V, I_D = 3.5A
- Total Gate Charge (Q_g): 28nC (typical)
- Gate Charge at 10V (Q_gs): 5.6nC (typical)
- Package Type: TO-220F
- Switching power supplies
- DC-DC converters
- Motor control circuits
- Electronic ballasts
- Audio amplifiers
Technical Specifications:
- Logic Family: CMOS
- Number of Channels: 3
- Switch Configuration: Single-Pole Double-Throw (SPDT)
- Supply Voltage Range: 3V to 15V
- “ON” Resistance (R_ON): 125Ω typical at V_DD = 10V
- “OFF” Leakage Current (I_OFF): ±100pA typical at V_DD = 10V
- Control Input Voltage (V_IH): 0.7 V_DD min, 0.3 V_DD max
- Maximum Operating Frequency: 40 MHz at V_DD = 10V
Applications:
- Signal routing and switching
- Analog and digital multiplexing
- Audio and video signal processing
- Data acquisition systems
- Test equipment