IRFZ48N N channel MOSFET
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Description: The IRFZ48N is an N-channel power MOSFET designed for various high-current switching applications. It is suitable for use in power supplies, motor control, and DC-DC converters where high efficiency and robust performance are required. The MOSFET offers low on-resistance and high-speed switching characteristics, making it ideal for both low and high-frequency applications. The IRFZ48N is housed in a TO-220 package, providing good thermal performance and ease of mounting.
Key Features:
- N-channel enhancement mode power MOSFET
- Low on-resistance for high efficiency
- High current handling capability
- Fast switching speed
- Rugged and reliable design
- RoHS compliant
- Continuous Drain Current (I_D): 64A (at 25°C)
- Pulsed Drain Current (I_DM): 210A
- Gate-Source Voltage (V_GS): ±20V
- Total Gate Charge (Q_g): 89nC (typical)
- Rise Time (t_r): 78ns
- Fall Time (t_f): 48ns
- Power supplies
- Motor control
- DC-DC converters
- Switching regulators
- Battery management
Technical Specifications:
- Logic Family: CMOS
- Number of Channels: 3
- Switch Configuration: Single-Pole Double-Throw (SPDT)
- Supply Voltage Range: 3V to 15V
- “ON” Resistance (R_ON): 125Ω typical at V_DD = 10V
- “OFF” Leakage Current (I_OFF): ±100pA typical at V_DD = 10V
- Control Input Voltage (V_IH): 0.7 V_DD min, 0.3 V_DD max
- Maximum Operating Frequency: 40 MHz at V_DD = 10V
Applications:
- Signal routing and switching
- Analog and digital multiplexing
- Audio and video signal processing
- Data acquisition systems
- Test equipment