IRFP250M MOSFET
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Description: The IRFP250M is an N-channel power MOSFET designed for high-speed switching applications. It features low on-state resistance and high switching speed, making it ideal for use in power supplies, motor control, and other electronic switching circuits requiring efficient and reliable performance.
Key Features:
- N-channel enhancement mode MOSFET
- Low on-state resistance (R_DS(on))
- High-speed switching capability
- Low gate charge
- High current handling capability
- Drain-Source Voltage (V_DS): 200V
- Continuous Drain Current (I_D): 30A
- Pulsed Drain Current (I_DM): 120A
- Gate-Source Voltage (V_GS): ±20V
- On-State Resistance (R_DS(on)): 0.055 ohms (max) at V_GS = 10V, I_D = 15A
- Total Gate Charge (Q_G): 190nC (typical)
- Operating Temperature Range: -55°C to +175°C
- Package Type: TO-247AC
- Switching power supplies
- Motor control
- DC-DC converters
- Inverters
- Class D amplifiers
Technical Specifications:
- Logic Family: CMOS
- Number of Channels: 3
- Switch Configuration: Single-Pole Double-Throw (SPDT)
- Supply Voltage Range: 3V to 15V
- “ON” Resistance (R_ON): 125Ω typical at V_DD = 10V
- “OFF” Leakage Current (I_OFF): ±100pA typical at V_DD = 10V
- Control Input Voltage (V_IH): 0.7 V_DD min, 0.3 V_DD max
- Maximum Operating Frequency: 40 MHz at V_DD = 10V
Applications:
- Signal routing and switching
- Analog and digital multiplexing
- Audio and video signal processing
- Data acquisition systems
- Test equipment