5N60 FET
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Description: The 5N60 is an N-channel power MOSFET designed for high-speed switching applications in power supplies, DC-DC converters, motor control circuits, and other power management applications. It features a low on-resistance and is capable of handling high currents and voltages efficiently. The MOSFET is housed in a TO-220 package, providing good thermal dissipation and ease of mounting.
Key Features:
- N-channel enhancement mode power MOSFET
- Low on-resistance for high efficiency
- Fast switching speed
- High current and voltage ratings
- Rugged and reliable design
- RoHS compliant
- Drain-Source Voltage (V_DS): 600V
- Continuous Drain Current (I_D): 5A (at 25°C)
- Pulsed Drain Current (I_DM): 20A
- Gate-Source Voltage (V_GS): ±30V
- On-Resistance (R_DS(on)): 1.8Ω (max) at V_GS = 10V, I_D = 2.5A
- Total Gate Charge (Q_g): 28nC (typical)
- Gate Charge at 10V (Q_gs): 7.5nC (typical)
- Power supplies
- DC-DC converters
- Motor control
- Switching regulators
- Solenoid and relay drivers
Technical Specifications:
- Logic Family: CMOS
- Number of Channels: 3
- Switch Configuration: Single-Pole Double-Throw (SPDT)
- Supply Voltage Range: 3V to 15V
- “ON” Resistance (R_ON): 125Ω typical at V_DD = 10V
- “OFF” Leakage Current (I_OFF): ±100pA typical at V_DD = 10V
- Control Input Voltage (V_IH): 0.7 V_DD min, 0.3 V_DD max
- Maximum Operating Frequency: 40 MHz at V_DD = 10V
Applications:
- Signal routing and switching
- Analog and digital multiplexing
- Audio and video signal processing
- Data acquisition systems
- Test equipment