IRF730 N channel FET
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Description: The IRF730 is an N-channel power MOSFET designed for high-speed switching and power amplification applications. It features a low on-resistance and high switching speed, making it suitable for use in switching regulators, motor control, and DC-DC converters. The MOSFET is housed in a TO-220 package, which provides good thermal performance and ease of mounting.
Key Features:
- N-channel enhancement mode power MOSFET
- Low on-resistance for high efficiency
- High-speed switching capability
- Rugged and reliable design
- RoHS compliant
- Drain-Source Voltage (V_DS): 400V
- Continuous Drain Current (I_D): 5.5A (at 25°C)
- Pulsed Drain Current (I_DM): 22A
- Gate-Source Voltage (V_GS): ±22V
- Switching regulators
- Motor control
- DC-DC converters
- Power amplifiers
- Solenoid and relay drivers
Technical Specifications:
- Logic Family: CMOS
- Number of Channels: 3
- Switch Configuration: Single-Pole Double-Throw (SPDT)
- Supply Voltage Range: 3V to 15V
- “ON” Resistance (R_ON): 125Ω typical at V_DD = 10V
- “OFF” Leakage Current (I_OFF): ±100pA typical at V_DD = 10V
- Control Input Voltage (V_IH): 0.7 V_DD min, 0.3 V_DD max
- Maximum Operating Frequency: 40 MHz at V_DD = 10V
Applications:
- Signal routing and switching
- Analog and digital multiplexing
- Audio and video signal processing
- Data acquisition systems
- Test equipment