IRFB4229 MOSFET
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Description: The IRFB4229 is an N-channel power MOSFET designed for high efficiency and fast switching in a variety of power management applications. This MOSFET features low on-resistance, high current handling capability, and excellent thermal performance, making it ideal for use in power supplies, motor control circuits, and DC-DC converters. Its rugged design ensures reliability and longevity in demanding environments.
Key Features:
- N-channel enhancement mode power MOSFET
- Low on-resistance for high efficiency
- High current handling capability
- Fast switching speed
- Rugged and reliable design
- RoHS compliant
- Drain-Source Voltage (V_DS): 150V
- Continuous Drain Current (I_D): 120A (at 25°C)
- Pulsed Drain Current (I_DM): 480A
- Gate-Source Voltage (V_GS): ±20V
- On-Resistance (R_DS(on)): 0.0044Ω (max) at V_GS = 10V
- Total Gate Charge (Q_g): 190nC (typical)
- Rise Time (t_r): 80ns
- Fall Time (t_f): 45ns
- Package Type: TO-220
- Power supplies
- Motor control
- DC-DC converters
- Load switching
- Battery protection
Technical Specifications:
- Logic Family: CMOS
- Number of Channels: 3
- Switch Configuration: Single-Pole Double-Throw (SPDT)
- Supply Voltage Range: 3V to 15V
- “ON” Resistance (R_ON): 125Ω typical at V_DD = 10V
- “OFF” Leakage Current (I_OFF): ±100pA typical at V_DD = 10V
- Control Input Voltage (V_IH): 0.7 V_DD min, 0.3 V_DD max
- Maximum Operating Frequency: 40 MHz at V_DD = 10V
Applications:
- Signal routing and switching
- Analog and digital multiplexing
- Audio and video signal processing
- Data acquisition systems
- Test equipment