3N80 switching power supply FET
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The 3N80 is an N-channel enhancement mode Power MOSFET designed for high-efficiency switching applications in power supplies and converters. With a high voltage rating and low on-resistance, this FET is suitable for use in various power management applications, providing reliable and efficient performance.
Key Features:
- High Voltage Capability: 800V drain-source voltage (V_DS)
- Current Handling: 3A continuous drain current (I_D)
- Low On-Resistance: R_DS(on) of 4.5Ω for efficient switching
- Fast Switching: Quick transition times for improved performance
- Thermal Performance: Robust package for efficient heat dissipation
- Safe Operating Area: Wide range of safe operating conditions
- Drain-Source Voltage (V_DS): 800V
- Continuous Drain Current (I_D): 3A
- Pulsed Drain Current (I_DM): 12A
- Gate-Source Voltage (V_GS): ±30V
- On-Resistance (R_DS(on)): 4.5Ω
- Total Gate Charge (Q_g): 27nC
- Gate Threshold Voltage (V_GS(th)): 3V (max)
- Power Dissipation (P_D): 60W
- Operating Temperature Range: -55°C to +150°C
- Package: TO-220
- Weight: 2 grams
- Switching power supplies
- DC-DC converters
- Motor control circuits
- High voltage lighting systems
- Industrial power management
- Consumer electronics
- Circuit Integration: Connect the FET in your circuit as per the design requirements, ensuring proper orientation of the gate, drain, and source terminals.
- Gate Drive: Use an appropriate gate drive voltage (typically 10V to 15V) to fully turn on the MOSFET and achieve low on-resistance.
- Thermal Management: Implement proper heat sinking or cooling to manage thermal dissipation and maintain optimal performance.
- Load Control: Utilize the MOSFET to control high voltage loads, ensuring that the current and voltage ratings are within specified limits.
- Switching: Take advantage of the fast switching characteristics to improve the efficiency of power conversion and control applications.
- Ensure the MOSFET is operated within its specified voltage and current limits to avoid damage.
- Handle with care to prevent electrostatic discharge (ESD) damage.
- Implement proper thermal management to avoid overheating.
Technical Specifications:
- Logic Family: CMOS
- Number of Channels: 3
- Switch Configuration: Single-Pole Double-Throw (SPDT)
- Supply Voltage Range: 3V to 15V
- “ON” Resistance (R_ON): 125Ω typical at V_DD = 10V
- “OFF” Leakage Current (I_OFF): ±100pA typical at V_DD = 10V
- Control Input Voltage (V_IH): 0.7 V_DD min, 0.3 V_DD max
- Maximum Operating Frequency: 40 MHz at V_DD = 10V
Applications:
- Signal routing and switching
- Analog and digital multiplexing
- Audio and video signal processing
- Data acquisition systems
- Test equipment