IRFP450 500V 14A N channel FET
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Description: The IRFP450 is a high-power N-channel MOSFET designed for applications requiring high switching speed and efficiency. It operates in enhancement mode and is suitable for power supplies, motor control, and other high-current switching circuits. The MOSFET offers low on-resistance and can handle high currents with minimal gate drive voltage.
Key Features:
- N-channel enhancement mode power MOSFET
- Low on-resistance for high efficiency
- Fast switching speed
- Low gate drive voltage
- High current handling capability
- Rugged and reliable design
- RoHS compliant
- Drain-Source Voltage (V_DS): 500V
- Continuous Drain Current (I_D): 14A
- Pulsed Drain Current (I_DM): 56A
- Gate-Source Voltage (V_GS): ±20V
- On-Resistance (R_DS(on)): 0.55Ω (max) at V_GS = 10V, I_D = 7.5A
- Total Gate Charge (Q_g): 170nC (typical)
- Gate Charge at 10V (Q_gs): 45nC (typical)
- Package Type: TO-247
- Power supplies
- Motor control
- DC-DC converters
- Switching regulators
- Inverters
Technical Specifications:
- Logic Family: CMOS
- Number of Channels: 3
- Switch Configuration: Single-Pole Double-Throw (SPDT)
- Supply Voltage Range: 3V to 15V
- “ON” Resistance (R_ON): 125Ω typical at V_DD = 10V
- “OFF” Leakage Current (I_OFF): ±100pA typical at V_DD = 10V
- Control Input Voltage (V_IH): 0.7 V_DD min, 0.3 V_DD max
- Maximum Operating Frequency: 40 MHz at V_DD = 10V
Applications:
- Signal routing and switching
- Analog and digital multiplexing
- Audio and video signal processing
- Data acquisition systems
- Test equipment