IRF5210 P channel MOSFET
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Description: The IRF5210 is a P-channel power MOSFET designed for high efficiency and fast switching in various power management applications. It is suitable for use in power supplies, motor control, and DC-DC converters. This MOSFET offers low on-resistance and high current handling capability, ensuring efficient performance in a compact and durable TO-220 package.
Key Features:
- P-channel enhancement mode power MOSFET
- Low on-resistance for high efficiency
- High current handling capability
- Fast switching speed
- Rugged and reliable design
- RoHS compliant
- Drain-Source Voltage (V_DS): -100V
- Continuous Drain Current (I_D): -38A (at 25°C)
- Pulsed Drain Current (I_DM): -140A
- Gate-Source Voltage (V_GS): ±20V
- Total Gate Charge (Q_g): 150nC (typical)
- Power supplies
- Motor control
- DC-DC converters
- Load switching
- Battery protection
Technical Specifications:
- Logic Family: CMOS
- Number of Channels: 3
- Switch Configuration: Single-Pole Double-Throw (SPDT)
- Supply Voltage Range: 3V to 15V
- “ON” Resistance (R_ON): 125Ω typical at V_DD = 10V
- “OFF” Leakage Current (I_OFF): ±100pA typical at V_DD = 10V
- Control Input Voltage (V_IH): 0.7 V_DD min, 0.3 V_DD max
- Maximum Operating Frequency: 40 MHz at V_DD = 10V
Applications:
- Signal routing and switching
- Analog and digital multiplexing
- Audio and video signal processing
- Data acquisition systems
- Test equipment