IRF520N
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Description: The IRF520N is an N-channel enhancement mode power MOSFET designed for high-speed switching and efficient power management. It is widely used in various electronic circuits, including power supplies, motor drivers, and switching regulators. The IRF520N offers low on-resistance and high current handling capabilities, making it suitable for applications requiring efficient and reliable power switching.
Key Features:
- N-channel enhancement mode MOSFET
- Low on-resistance for efficient power switching
- High current handling capability
- Fast switching speed
- Robust and reliable performance
- Available in a TO-220 package for effective heat dissipation
- RoHS compliant
- Drain-Source Voltage (V_DSS): 100V
- Continuous Drain Current (I_D): 9.2A
- Pulsed Drain Current (I_DM): 33A
- Gate-Source Voltage (V_GS): ±20V
- Maximum Power Dissipation (P_D): 40W
- On-Resistance (R_DS(on)): 0.27Ω (at V_GS = 10V, I_D = 5.2A)
- Gate Charge (Q_g): 26nC (typical)
- Input Capacitance (C_iss): 620pF (typical)
- Operating Temperature Range: -55°C to +175°C
- Package Type: TO-220
- Switching power supplies
- Motor control and drivers
- DC-DC converters
- Battery-powered applications
- Load switching
- Inverters
Technical Specifications:
- Logic Family: CMOS
- Number of Channels: 3
- Switch Configuration: Single-Pole Double-Throw (SPDT)
- Supply Voltage Range: 3V to 15V
- “ON” Resistance (R_ON): 125Ω typical at V_DD = 10V
- “OFF” Leakage Current (I_OFF): ±100pA typical at V_DD = 10V
- Control Input Voltage (V_IH): 0.7 V_DD min, 0.3 V_DD max
- Maximum Operating Frequency: 40 MHz at V_DD = 10V
Applications:
- Signal routing and switching
- Analog and digital multiplexing
- Audio and video signal processing
- Data acquisition systems
- Test equipment