FDP3632
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Description: The FDP3632 is an N-channel power MOSFET designed for high-efficiency power switching applications in various electronic circuits. It is particularly suitable for use in power supplies, motor controls, DC-DC converters, and other applications where high current handling and low on-resistance are essential. The MOSFET is housed in a TO-220 package, providing good thermal dissipation and robust performance under demanding operating conditions.
Key Features:
- N-channel power MOSFET
- Low on-resistance for efficient power switching
- High current handling capability
- Fast switching speed
- Enhanced thermal performance with TO-220 package
- RoHS compliant
- Drain-Source Voltage (V_DS): 60V
- Continuous Drain Current (I_D): 29A
- Pulsed Drain Current (I_DM): 116A
- Gate-Source Voltage (V_GS): ±20V
- Maximum Power Dissipation (P_D): 2.4W
- On-Resistance (R_DS(on)): 0.02Ω (at V_GS = 10V, I_D = 30A)
- Gate Charge (Q_g): 95nC (typical)
- Input Capacitance (C_iss): 1800pF (typical)
- Operating Temperature Range: -55°C to +150°C
- Package Type: TO-220
- Power supplies
- Motor controls
- DC-DC converters
- Battery management systems
- LED drivers
- Load switching
Technical Specifications:
- Logic Family: CMOS
- Number of Channels: 3
- Switch Configuration: Single-Pole Double-Throw (SPDT)
- Supply Voltage Range: 3V to 15V
- “ON” Resistance (R_ON): 125Ω typical at V_DD = 10V
- “OFF” Leakage Current (I_OFF): ±100pA typical at V_DD = 10V
- Control Input Voltage (V_IH): 0.7 V_DD min, 0.3 V_DD max
- Maximum Operating Frequency: 40 MHz at V_DD = 10V
Applications:
- Signal routing and switching
- Analog and digital multiplexing
- Audio and video signal processing
- Data acquisition systems
- Test equipment