IRFB4310
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Description: The IRFB4310 is an N-channel power MOSFET designed for high-power switching applications where efficiency and robust performance are critical. It is suitable for use in power supplies, motor controls, inverters, and other electronic circuits requiring high current handling and low on-resistance. The MOSFET is housed in a TO-220 package, which allows for effective heat dissipation and reliable operation under various conditions.
Key Features:
- N-channel power MOSFET
- Low on-resistance for efficient power switching
- High current handling capability
- Fast switching speed
- Enhanced thermal performance with TO-220 package
- RoHS compliant
- Drain-Source Voltage (V_DS): 100V
- Continuous Drain Current (I_D): 150A
- Pulsed Drain Current (I_DM): 600A
- Gate-Source Voltage (V_GS): ±20V
- Maximum Power Dissipation (P_D): 200W
- On-Resistance (R_DS(on)): 4.0mΩ (at V_GS = 10V, I_D = 75A)
- Gate Charge (Q_g): 310nC (typical)
- Input Capacitance (C_iss): 6010pF (typical)
- Operating Temperature Range: -55°C to +175°C
- Package Type: TO-220
- Power supplies
- Motor controls
- DC-DC converters
- Inverters
- Switching regulators
- Automotive and industrial applications
Technical Specifications:
- Logic Family: CMOS
- Number of Channels: 3
- Switch Configuration: Single-Pole Double-Throw (SPDT)
- Supply Voltage Range: 3V to 15V
- “ON” Resistance (R_ON): 125Ω typical at V_DD = 10V
- “OFF” Leakage Current (I_OFF): ±100pA typical at V_DD = 10V
- Control Input Voltage (V_IH): 0.7 V_DD min, 0.3 V_DD max
- Maximum Operating Frequency: 40 MHz at V_DD = 10V
Applications:
- Signal routing and switching
- Analog and digital multiplexing
- Audio and video signal processing
- Data acquisition systems
- Test equipment