2N5551 Transistor
The 2N5551 is an NPN bipolar junction transistor (BJT) designed for general-purpose applications, including amplification and switching. It offers high voltage capabilities and high current handling, making it suitable for a wide range of electronic circuits, from audio amplifiers to power management systems.
Key Features:
- Type: NPN Bipolar Junction Transistor (BJT)
- High Voltage Rating: Capable of withstanding high voltage levels
- High Current Capability: Suitable for medium to high current applications
- High Gain: Provides effective amplification for various signals
- Compact Package: Available in a TO-92 package for easy integration
- Collector-Emitter Voltage (Vce): 60V
- Collector-Base Voltage (Vcb): 60V
- Emitter-Base Voltage (Veb): 6V
- Collector Current (Ic): 15A
- Power Dissipation (Ptot): 1W
- DC Current Gain (hFE): 50 to 400
- Transition Frequency (ft): 100MHz
- Package Type: TO-92
- Signal Amplification: Ideal for amplifying audio and low-frequency signals
- Switching: Suitable for switching applications in various electronic circuits
- Power Amplification: Used in power amplifiers and related circuits
- Power Management: Effective in power management and regulation systems
- General Purpose: Versatile for various general-purpose electronic applications
- Circuit Design: Integrate the 2N5551 transistor into your circuit according to the desired application.
- Biasing: Properly bias the transistor to ensure optimal performance in amplification or switching.
- Connection: Connect the collector, base, and emitter terminals correctly in your circuit.
- Testing: Test the circuit to ensure the transistor operates as intended.
- Voltage and Current Limits: Adhere to the maximum voltage and current ratings to prevent damage.
- Heat Dissipation: Ensure adequate heat management to avoid overheating, especially in high-current applications.
- Static Electricity: Handle with care to prevent damage from electrostatic discharge (ESD).