2N5401 Transistor
The 2N5401 is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It is capable of handling medium power levels and features a high voltage rating, making it suitable for a variety of electronic circuits, including audio amplifiers, signal processing, and power management.
Key Features:
- Type: PNP Bipolar Junction Transistor (BJT)
- High Voltage: Capable of withstanding high voltage levels
- Medium Power Handling: Suitable for medium power applications
- Good Frequency Response: Effective for amplification and signal processing
- Compact Package: Available in a TO-92 package for easy integration
- Collector-Emitter Voltage (Vce): -150V
- Collector-Base Voltage (Vcb): -160V
- Emitter-Base Voltage (Veb): -5V
- Collector Current (Ic): -600mA
- Power Dissipation (Ptot): 625mW
- DC Current Gain (hFE): 30 to 240
- Transition Frequency (ft): 50MHz
- Package Type: TO-92
- Signal Amplification: Used in medium-power amplification circuits
- Switching Applications: Suitable for medium-power switching applications
- Audio Frequency Circuits: Ideal for audio amplification and signal processing
- Power Management: Used in power management and regulation circuits
- General Purpose: Commonly used in various general-purpose electronic circuits
- Circuit Design: Integrate the 2N5401 transistor into your circuit design based on the required application.
- Biasing: Properly bias the transistor for optimal performance in amplification or switching.
- Connection: Connect the collector, base, and emitter terminals appropriately in the circuit.
- Testing: Test the circuit to ensure the transistor is functioning as expected in the desired application.
- Voltage and Current Limits: Do not exceed the maximum voltage and current ratings to prevent damage.
- Heat Dissipation: Ensure adequate heat dissipation to avoid overheating, especially in medium-power applications.
- Static Electricity: Handle with care to avoid damage from electrostatic discharge (ESD).