Description:
The FGA15N120ANTD is a 1200V N-Channel Power MOSFET (IGBT) designed for high-voltage, high-power applications. It utilizes Fairchild Semiconductor's proprietary NPT (Non-Punch Through) trench technology, offering superior conduction and switching performance, high avalanche ruggedness, and easy parallel operation.
Key Features:
- High voltage rating: 1200V
- High current capability: 15A
- Low saturation voltage (VCE(sat)) for efficient power conversion
- Low switching losses for improved efficiency
- Enhanced avalanche capability for robust operation
- Suitable for parallel operation for increased current handling
- NPT trench technology for optimized performance
Applications:
- Power converters and inverters
- Motor drives and control systems
- Induction heating and welding equipment
- Power supplies for industrial and commercial applications
Technical Specifications:
For detailed technical specifications, including electrical characteristics, thermal performance, package information, and application notes, please refer to the datasheet.