18N50 FET
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Description: The 18N50 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high power switching applications. It features low on-state resistance (R_DS(on)) and high current handling capability, making it suitable for use in power supplies, motor control, and other high current switching circuits. This FET operates efficiently with low gate drive requirements, providing reliable performance in various industrial and consumer electronics applications.
Key Features:
- N-channel MOSFET
- Drain-Source Voltage (V_DSS): 500V
- Continuous Drain Current (I_D): 18A
- Low on-state resistance (R_DS(on))
- Fast switching speed
- Low gate drive voltage
- RoHS compliant
- Gate-Source Voltage (V_GS): ±20V
- Total Gate Charge (Q_G): Typically 80nC
- Operating Temperature Range: -55°C to +150°C
- Package Type: TO-220
- Power supplies
- Motor control
- DC-DC converters
- Inverters
- Switching regulators
Technical Specifications:
- Logic Family: CMOS
- Number of Channels: 3
- Switch Configuration: Single-Pole Double-Throw (SPDT)
- Supply Voltage Range: 3V to 15V
- “ON” Resistance (R_ON): 125Ω typical at V_DD = 10V
- “OFF” Leakage Current (I_OFF): ±100pA typical at V_DD = 10V
- Control Input Voltage (V_IH): 0.7 V_DD min, 0.3 V_DD max
- Maximum Operating Frequency: 40 MHz at V_DD = 10V
Applications:
- Signal routing and switching
- Analog and digital multiplexing
- Audio and video signal processing
- Data acquisition systems
- Test equipment