Description: The 25N120 is a high-voltage, high-current IGBT (Insulated Gate Bipolar Transistor) designed for use in induction cooker applications and other high-power electronic circuits. It offers robust performance with its ability to handle high currents and voltages, making it suitable for applications requiring efficient switching and power control.
Key Features:
- High-voltage IGBT (Insulated Gate Bipolar Transistor)
- Designed for induction cooker and high-power applications
- High current and voltage ratings
- Fast switching capability
- Low saturation voltage
- RoHS compliant
- Collector-Emitter Voltage (V_CES): 1200V
- Collector Current (I_C): 25A
- Maximum Collector-Emitter Saturation Voltage (V_CE(sat)): 2.5V (at I_C = 25A)
- Switching Frequency: Up to several kHz
- Operating Temperature Range: -40°C to +150°C
- Package Type: TO-247
- Induction cookers
- High-power inverters
- Switching power supplies
- Motor drives
- Industrial applications requiring high current and voltage handling