The IRF9630 is a P-channel power MOSFET designed for high-voltage applications. It offers efficient switching with its high voltage rating and moderate current capability, making it suitable for use in power supplies, motor control circuits, and other high-power electronic systems.
Key Features:
- P-channel enhancement mode MOSFET
- High voltage rating: 200V
- Moderate current rating: 6.5A
- Low on-resistance for efficient switching
- Fast switching capabilities
- Rugged and reliable construction
- Suitable for high-frequency and high-power applications
- Type: P-channel MOSFET
- Drain-Source Voltage (Vds): -200V
- Continuous Drain Current (Id): -6.5A
- Pulsed Drain Current (Id, Pulse): -26A
- Gate-Source Voltage (Vgs): ±20V
- Rds(on): 1.200Ω (maximum) at Vgs = -10V
- Total Gate Charge (Qg): 85nC (typical)
- Gate-Source Threshold Voltage (Vgs(th)): -2.0V to -4.0V
- Power Dissipation (Pd): 75W
- Operating Temperature Range: -55°C to +150°C
- Package Type: TO-220
- Switched-mode power supplies (SMPS)
- Motor control circuits
- DC-DC converters
- Inverters and amplifiers
- Load switches
- Automotive electronics
- Power management systems
- Connect the drain terminal to the high-side load or power supply.
- Connect the source terminal to the low-side or ground of the circuit.
- Apply a suitable gate voltage (Vgs) to control the switching operation.
- Use a gate resistor if needed to control the switching speed and reduce noise.
- Ensure proper heat sinking to handle power dissipation and prevent overheating.
- Handle the MOSFET carefully to avoid damage from electrostatic discharge (ESD).
- Verify the voltage and current ratings to ensure compatibility with your circuit.
- Ensure adequate cooling and heat dissipation to prevent thermal overload.