The IR2103PBF is a high voltage, high-speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is designed to drive high-side and low-side N-channel power MOSFETs or IGBTs in a half-bridge configuration. The device features a floating channel designed for bootstrap operation, allowing it to drive the high-side switch up to 600V.
Key Features:
- Gate drive supply range from 10V to 20V
- Floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration up to 600V
- Gate drive outputs: 2A peak source, 2A peak sink
- Independent high-side and low-side channels
- Under-voltage lockout for both channels
- Logic input (IR2103) compatible with standard CMOS or LSTTL outputs
- Matched propagation delay for both channels
- Low side output in phase with input signal
- High side output out of phase with input signal
- Supply Voltage (Vcc): 10V - 20V
- Floating Supply Voltage (Vb): up to 600V
- Logic Supply Voltage (Vss): -5V - 20V
- Output Source Current (Io+): 2A
- Output Sink Current (Io-): 2A
- Gate Drive Output Voltage (Vout): 10V - 20V
- Propagation Delay: 120ns (typical)
- Operating Temperature Range: -40°C to +125°C
- Package: PDIP-8
- Motor drive applications
- Induction heating
- UPS systems
- DC-DC converters
- Switch-mode power supplies