Description: The 5N60 is an N-channel power MOSFET designed for high-speed switching applications in power supplies, DC-DC converters, motor control circuits, and other power management applications. It features a low on-resistance and is capable of handling high currents and voltages efficiently. The MOSFET is housed in a TO-220 package, providing good thermal dissipation and ease of mounting.
Key Features:
- N-channel enhancement mode power MOSFET
- Low on-resistance for high efficiency
- Fast switching speed
- High current and voltage ratings
- Rugged and reliable design
- RoHS compliant
- Drain-Source Voltage (V_DS): 600V
- Continuous Drain Current (I_D): 5A (at 25°C)
- Pulsed Drain Current (I_DM): 20A
- Gate-Source Voltage (V_GS): ±30V
- On-Resistance (R_DS(on)): 1.8Ω (max) at V_GS = 10V, I_D = 2.5A
- Total Gate Charge (Q_g): 28nC (typical)
- Gate Charge at 10V (Q_gs): 7.5nC (typical)
- Power supplies
- DC-DC converters
- Motor control
- Switching regulators
- Solenoid and relay drivers