IRF730 N channel FET
Description: The IRF730 is an N-channel power MOSFET designed for high-speed switching and power amplification applications. It features a low on-resistance and high switching speed, making it suitable for use in switching regulators, motor control, and DC-DC converters. The MOSFET is housed in a TO-220 package, which provides good thermal performance and ease of mounting.
Key Features:
- N-channel enhancement mode power MOSFET
- Low on-resistance for high efficiency
- High-speed switching capability
- Rugged and reliable design
- RoHS compliant
- Drain-Source Voltage (V_DS): 400V
- Continuous Drain Current (I_D): 5.5A (at 25°C)
- Pulsed Drain Current (I_DM): 22A
- Gate-Source Voltage (V_GS): ±22V
- Switching regulators
- Motor control
- DC-DC converters
- Power amplifiers
- Solenoid and relay drivers