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3N80 switching power supply FET

Price:

₦ 1,100.00



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3N80 switching power supply FET

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₦ 1,100.00 1100.0 NGN ₦ 1,100.00

₦ 1,100.00

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The 3N80 is an N-channel enhancement mode Power MOSFET designed for high-efficiency switching applications in power supplies and converters. With a high voltage rating and low on-resistance, this FET is suitable for use in various power management applications, providing reliable and efficient performance. Key Features:
  • High Voltage Capability: 800V drain-source voltage (V_DS)
  • Current Handling: 3A continuous drain current (I_D)
  • Low On-Resistance: R_DS(on) of 4.5Ω for efficient switching
  • Fast Switching: Quick transition times for improved performance
  • Thermal Performance: Robust package for efficient heat dissipation
  • Safe Operating Area: Wide range of safe operating conditions
Technical Specifications:
  • Drain-Source Voltage (V_DS): 800V
  • Continuous Drain Current (I_D): 3A
  • Pulsed Drain Current (I_DM): 12A
  • Gate-Source Voltage (V_GS): ±30V
  • On-Resistance (R_DS(on)): 4.5Ω
  • Total Gate Charge (Q_g): 27nC
  • Gate Threshold Voltage (V_GS(th)): 3V (max)
  • Power Dissipation (P_D): 60W
  • Operating Temperature Range: -55°C to +150°C
  • Package: TO-220
  • Weight: 2 grams
Applications:
  • Switching power supplies
  • DC-DC converters
  • Motor control circuits
  • High voltage lighting systems
  • Industrial power management
  • Consumer electronics
Usage:
  1. Circuit Integration: Connect the FET in your circuit as per the design requirements, ensuring proper orientation of the gate, drain, and source terminals.
  2. Gate Drive: Use an appropriate gate drive voltage (typically 10V to 15V) to fully turn on the MOSFET and achieve low on-resistance.
  3. Thermal Management: Implement proper heat sinking or cooling to manage thermal dissipation and maintain optimal performance.
  4. Load Control: Utilize the MOSFET to control high voltage loads, ensuring that the current and voltage ratings are within specified limits.
  5. Switching: Take advantage of the fast switching characteristics to improve the efficiency of power conversion and control applications.
Caution:
  • Ensure the MOSFET is operated within its specified voltage and current limits to avoid damage.
  • Handle with care to prevent electrostatic discharge (ESD) damage.
  • Implement proper thermal management to avoid overheating.
Datasheet: For more detailed technical information, refer to the 3N80 Datasheet.