Description: The IRF9610 is a P-channel power MOSFET designed for low-power applications where high efficiency and fast switching are required. It operates in enhancement mode and is commonly used in audio amplifiers, power management circuits, and other low-voltage switching applications. The MOSFET offers low on-resistance and can switch high currents with minimal gate drive voltage.
Key Features:
- P-channel enhancement mode power MOSFET
- Low on-resistance for high efficiency
- Fast switching speed
- Low gate drive voltage
- High current handling capability
- Rugged and reliable design
- RoHS compliant
- Drain-Source Voltage (V_DS): -200V
- Continuous Drain Current (I_D): -1.2A
- Pulsed Drain Current (I_DM): -4A
- Gate-Source Voltage (V_GS): ±20V
- On-Resistance (R_DS(on)): 6Ω (max) at V_GS = -10V, I_D = -500mA
- Total Gate Charge (Q_g): 5nC (typical)
- Gate Charge at -10V (Q_gs): 1.5nC (typical)
- Audio amplifiers
- Low-voltage switching circuits
- Power management
- Battery management
- DC-DC converters