Description: The IRF520N is an N-channel enhancement mode power MOSFET designed for high-speed switching and efficient power management. It is widely used in various electronic circuits, including power supplies, motor drivers, and switching regulators. The IRF520N offers low on-resistance and high current handling capabilities, making it suitable for applications requiring efficient and reliable power switching.
Key Features:
- N-channel enhancement mode MOSFET
- Low on-resistance for efficient power switching
- High current handling capability
- Fast switching speed
- Robust and reliable performance
- Available in a TO-220 package for effective heat dissipation
- RoHS compliant
- Drain-Source Voltage (V_DSS): 100V
- Continuous Drain Current (I_D): 9.2A
- Pulsed Drain Current (I_DM): 33A
- Gate-Source Voltage (V_GS): ±20V
- Maximum Power Dissipation (P_D): 40W
- On-Resistance (R_DS(on)): 0.27Ω (at V_GS = 10V, I_D = 5.2A)
- Gate Charge (Q_g): 26nC (typical)
- Input Capacitance (C_iss): 620pF (typical)
- Operating Temperature Range: -55°C to +175°C
- Package Type: TO-220
- Switching power supplies
- Motor control and drivers
- DC-DC converters
- Battery-powered applications
- Load switching
- Inverters