IRF9510 P Channel FET
Description: The IRF9510 is a P-channel enhancement-mode MOSFET designed for efficient power management in a variety of applications. It is particularly suited for battery-operated circuits and other applications where low power consumption and fast switching speeds are essential. The MOSFET offers low on-resistance and can handle moderate currents with minimal gate voltage.
Key Features:
- P-channel enhancement-mode power MOSFET
- Low on-resistance for high efficiency
- Fast switching speed
- Low gate drive voltage
- High current handling capability
- Rugged and reliable design
- RoHS compliant
- Drain-Source Voltage (V_DS): -100V
- Continuous Drain Current (I_D): -4.5A
- Pulsed Drain Current (I_DM): -18A
- Gate-Source Voltage (V_GS): ±20V
- On-Resistance (R_DS(on)): 1.2Ω (max) at V_GS = -10V, I_D = -2.8A
- Total Gate Charge (Q_g): 30nC (typical)
- Gate Charge at 10V (Q_gs): 7nC (typical)
- Package Type: TO-220
- Power management in battery-operated devices
- DC-DC converters
- Switching regulators
- Motor control circuits
- Audio amplifiers