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IRF9640 200V 11A

Price:

₦ 850.00



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IRF9640 200V 11A

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₦ 850.00 850.0 NGN ₦ 850.00

₦ 850.00

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The IRF9640 is a P-channel power MOSFET designed for high-voltage and moderate-current applications. It provides efficient switching and is suitable for use in power supplies, motor control circuits, and various high-power electronic applications. Key Features:
  • P-channel enhancement mode MOSFET
  • High voltage rating: 200V
  • Moderate current rating: 11A
  • Low on-resistance for efficient switching
  • Fast switching capabilities
  • Rugged and reliable construction
  • Suitable for high-frequency applications
Technical Specifications:
  • Type: P-channel MOSFET
  • Drain-Source Voltage (Vds): -200V
  • Continuous Drain Current (Id): -11A
  • Pulsed Drain Current (Id, Pulse): -44A
  • Gate-Source Voltage (Vgs): ±20V
  • Rds(on): 0.500Ω (maximum) at Vgs = -10V
  • Total Gate Charge (Qg): 72nC (typical)
  • Gate-Source Threshold Voltage (Vgs(th)): -2.0V to -4.0V
  • Power Dissipation (Pd): 83W
  • Operating Temperature Range: -55°C to +150°C
  • Package Type: TO-220
Applications:
  • Switched-mode power supplies (SMPS)
  • Motor control circuits
  • DC-DC converters
  • Inverters and amplifiers
  • Load switches
  • Automotive electronics
  • Power management systems
Usage:
  1. Connect the drain terminal to the high-side load or power supply.
  2. Connect the source terminal to the low-side or ground of the circuit.
  3. Apply a suitable gate voltage (Vgs) to control the switching operation.
  4. Use a gate resistor if needed to control the switching speed and reduce noise.
  5. Ensure proper heat sinking to handle power dissipation and prevent overheating.
Caution:
  • Handle the MOSFET carefully to avoid damage from electrostatic discharge (ESD).
  • Verify the voltage and current ratings to ensure compatibility with your circuit.
  • Ensure adequate cooling and heat dissipation to prevent thermal overload.
Datasheet: For detailed technical specifications, refer to the IRF9640 Datasheet.